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www.irf.com 1 hexfet ? power mosfet specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. description features AUIRF2903Z s d g gds gate drain source advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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#" to-220ab AUIRF2903Z d s d g hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ automotive grade v (br)dss 30v r ds(on) typ. 1.9m max. 2.4m i d (silicon limited) 260a i d (package limited) 160a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.51 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) 290 2.0 20 max. 260 180 1020 160 820 290 see fig.12a, 12b, 15, 16 pd -96379

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.10mh r g = 25 , i as = 75a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. this is only applied to to-220ab pakcage.

calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 160a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. all ac and dc test condition based on former package limited current of 75a. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.021 ??? v/c r ds(on) static drain-to-source on-resistance ??? 1.9 2.4 m ( .0 .0 10 0 0 00 00 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 160 240 q gs gate-to-source charge ??? 51 ??? q gd gate-to-drain ("miller") charge ??? 58 ??? t d(on) turn-on delay time ??? 24 ??? t r rise time ??? 100 ??? t d(off) turn-off delay time ??? 48 ??? t f fall time ???37??? l d internal drain inductance between lead, 6mm (0.25in.) l s internal source inductance from package and center of die contact c iss input capacitance ??? 6320 ??? c oss output capacitance ??? 1980 ??? c rss reverse transfer capacitance ??? 1100 ??? c oss output capacitance ??? 5930 ??? c oss output capacitance ??? 2010 ??? c oss eff. effective output capacitance ??? 3050 ??? diode characteristics parameter min. typ. max. units continuous source current (body diode) pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 34 51 ns q rr reverse recovery charge ??? 29 44 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) nh pf a a na nc ns v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 24v, ? = 1.0mhz v gs = 0v, v ds = 0v to 24v v gs = 10v v dd = 15v i d = 75a** r g = 3.2 t j = 25c, i s = 75a**, v gs = 0v t j = 25c, i f = 75a**, v dd = 15v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 75a ** v ds = v gs , i d = 250 a v ds = 30v, v gs = 0v v ds = 30v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 10v, i d = 75a** i d = 75a** v ds = 24v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v i s i sm ??? 4.5 ??? 7.5 ??? ??? ??? ??? ??? ??? 160 1020

www.irf.com 3 ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? moisture sensitivity level 3l-to-220 n/a rohs compliant yes esd machine model class m4(+/- 800v ) ??? (per aec-q101-002) human body model class h2(+/- 4000v ) ??? (per aec-q101-001) charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60 s pulse width t j = 25c t j = 175c 0 20 40 60 80 100 120 140 160 180 i d, drain-to-source current (a) 0 40 80 120 160 200 240 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 10000 12000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 40 80 120 160 200 240 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v i d = 75a 0.1 1.0 10.0 100.0 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc limited by package

6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.08133 0.000044 0.2408 0.000971 0.18658 0.008723 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri

www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 26a 42a bottom 75a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma id = 250 a i d = 150 a q g q gs q gd v g charge +,-

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 75a

www.irf.com 9 fig 17. ./0

1) for n-channel hexfet power mosfets v ds 90% 10% v gs t d(on) t r t d(off) t f fig 18a. switching time test circuit fig 18b. switching time waveforms
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 2 ! " #$# "
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www.irf.com 11 ordering information base part package type standard pack complete part number form quantity AUIRF2903Z to-220 tube 50 AUIRF2903Z

12 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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